TK430A60F,S4X(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

U-MOSIX

Rds On (Max) @ Id, Vgs :

430mOhm @ 6.5A, 10V

Drain to Source Voltage (Vdss) :

600 V

Mounting Type :

Through Hole

FET Feature :

-

Operating Temperature :

150°C

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

13A (Ta)

Input Capacitance (Ciss) (Max) @ Vds :

1940 pF @ 300 V

Package :

Bulk

Package / Case :

TO-220-3 Full Pack

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

TO-220SIS

Gate Charge (Qg) (Max) @ Vgs :

48 nC @ 10 V

Vgs(th) (Max) @ Id :

4V @ 1.75mA

Product Status :

Active

Vgs (Max) :

±30V

Power Dissipation (Max) :

45W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V