TK42E12N1,S1X
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- Mfr.Part #
- TK42E12N1,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N CH 120V 88A TO-220
- Stock
- 5,101
- In Stock ：
- 5,101
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 60V
- Factory Lead Time :
- 16 Weeks
- Drain to Source Breakdown Voltage :
- 120V
- Power Dissipation :
- 140W
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 140W Tc
- Packaging :
- Tube
- Published :
- 2014
- Continuous Drain Current (ID) :
- 88A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 88A Tc
- Rise Time :
- 18ns
- Turn-Off Delay Time :
- 64 ns
- RoHS Status :
- RoHS Compliant
- Series :
- U-MOSVIII-H
- Fall Time (Typ) :
- 22 ns
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 21A, 10V
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Datasheets
- TK42E12N1,S1X
N-Channel Tube 9.4m Ω @ 21A, 10V ±20V 3100pF @ 60V 52nC @ 10V TO-220-3
TK42E12N1,S1X Description
Despite TOSHIBA's ongoing efforts to raise the quality and dependability of the Product, a defect or failure may occur. Customers must adhere to safety regulations and provide sufficient designs and safeguards for their hardware, software, and systems to reduce risk and prevent scenarios in which a product's malfunction or failure could result in a loss of life, physical harm, or property damage, including data loss or corruption. Prior to usage, consumers may design with the product, or they may include the product into their own applications.
TK42E12N1,S1X Features
Low drain-source on-resistance: RDS(ON) = 7.8 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
TK42E12N1,S1X Applications
Switching Voltage Regulators
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RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
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Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TK42A12N1,S4X | Toshiba Electronic Devices and Storage Corporation | 21,047 | MOSFET N-CH 120V 42A TO220SIS |
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