TK3P50D,RQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Rds On (Max) @ Id, Vgs :

3 Ω @ 1.5A, 10V

Mounting Type :

Surface Mount

Rise Time :

20ns

Power Dissipation :

60W

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 25V

Fall Time (Typ) :

10 ns

Drain to Source Voltage (Vdss) :

500V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Number of Pins :

3

Continuous Drain Current (ID) :

3A

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Power Dissipation-Max :

60W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

RoHS Compliant

Operating Temperature :

150°C TJ