TK370A60F,S4X(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

45W (Tc)

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

2200 pF @ 300 V

Technology :

MOSFET (Metal Oxide)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

55 nC @ 10 V

Product Status :

Active

Supplier Device Package :

TO-220SIS

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

15A (Ta)

Drain to Source Voltage (Vdss) :

600 V

Vgs (Max) :

±30V

FET Feature :

-

Series :

U-MOSIX

Package :

Bulk

Vgs(th) (Max) @ Id :

4V @ 2.04mA

Rds On (Max) @ Id, Vgs :

370mOhm @ 7.5A, 10V