TK33S10N1L,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

9.7mOhm @ 16.5A, 10V

Transistor Type :

1 N-Channel

Qualification :

AEC-Q101

Base Product Number :

TK33S10

Subcategory :

MOSFETs

FET Feature :

-

Mounting Type :

Surface Mount

Rise Time :

8 ns

Configuration :

Single

RoHS :

Details

Brand :

Toshiba

Power Dissipation (Max) :

125W (Tc)

Series :

U-MOSVIII-H

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 175 C

Package :

Digi-Reel?

Mounting Style :

SMD/SMT

Tradename :

U-MOSVIII-H

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Packaging :

MouseReel

Transistor Polarity :

N-Channel

Operating Temperature :

175°C

Input Capacitance (Ciss) (Max) @ Vds :

2250 pF @ 10 V

Channel Mode :

Enhancement

Product Type :

MOSFET

Product Status :

Active

FET Type :

N-Channel

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

2.5V @ 500μA

Gate Charge (Qg) (Max) @ Vgs :

33 nC @ 10 V

Supplier Device Package :

DPAK+

Current - Continuous Drain (Id) @ 25°C :

33A (Ta)

Manufacturer :

Toshiba

Drain to Source Voltage (Vdss) :

100 V