TK30A06N1,S4X
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- Mfr.Part #
- TK30A06N1,S4X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A TO220SIS
- Stock
- 261
- In Stock ：
- 261
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Turn On Delay Time :
- 21 ns
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 7.3ns
- Continuous Drain Current (ID) :
- 30A
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- 150°C TJ
- Turn-Off Delay Time :
- 28 ns
- Fall Time (Typ) :
- 7.3 ns
- Mount :
- Through Hole
- Power Dissipation-Max :
- 25W Tc
- Series :
- U-MOSVIII-H
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 15A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050pF @ 30V
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Number of Channels :
- 1
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Weight :
- 6.000006g
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 200μA
- Datasheets
- TK30A06N1,S4X
N-Channel Tube 15m Ω @ 15A, 10V ±20V 1050pF @ 30V 16nC @ 10V TO-220-3 Full Pack
TK30A06N1,S4X Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1050pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 30A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
TK30A06N1,S4X Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 28 ns
TK30A06N1,S4X Applications
There are a lot of Toshiba Semiconductor and Storage
TK30A06N1,S4X applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| TK30E06N1,S1X | Toshiba Electronic Devices and Storage Corporation | 2,086 | MOSFET N-CH 60V 43A TO220 |
| TK30S06K3L(T6L1,NQ | Toshiba Electronic Devices and Storage Corporation | 7,846 | MOSFET N-CH 60V 30A DPAK |
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