TK2R9E10PL,S1X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Maximum Operating Temperature :

+ 175 C

Subcategory :

MOSFETs

Package :

Tube

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power Dissipation (Max) :

306W (Tc)

Rise Time :

22 ns

Channel Mode :

Enhancement

Number of Elements :

1

Brand :

Toshiba

Product Category :

MOSFET

Operating Temperature Classification :

Military

Gate Charge (Qg) (Max) @ Vgs :

161 nC @ 10 V

Rds On (Max) @ Id, Vgs :

2.9mOhm @ 50A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Current - Continuous Drain (Id) @ 25°C :

100A (Ta)

Series :

U-MOSIX-H

Continuous Drain Current :

240(A)

RoHS :

Details

Pin Count :

3 +Tab

Packaging :

Rail/Tube

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

TO-220

Mounting :

Through Hole

Type :

Power MOSFET

Mounting Type :

Through Hole

Package Type :

TO-220

Tradename :

U-MOSIX-H

Polarity :

N

Product Status :

Active

FET Type :

N-Channel

Gate-Source Voltage (Max) :

±20(V)

Vgs (Max) :

±20V

Power Dissipation :

306(W)

Product Type :

MOSFET

Rad Hardened :

No

Configuration :

Single

FET Feature :

-

Drain to Source Voltage (Vdss) :

100 V

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

9500 pF @ 50 V

Transistor Polarity :

N-Channel

Operating Temp Range :

-55C to 175C

Operating Temperature :

175°C

Drain-Source On-Volt :

100(V)

Manufacturer :

Toshiba