TK2R9E10PL,S1X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

9500 pF @ 50 V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

161 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

100A (Ta)

Maximum Operating Temperature :

+ 175 C

Mounting :

Through Hole

Configuration :

Single

Number of Elements :

1

Package Type :

TO-220

Series :

U-MOSIX-H

Continuous Drain Current :

240(A)

Power Dissipation (Max) :

306W (Tc)

Brand :

Toshiba

Operating Temperature :

175°C

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

2.9mOhm @ 50A, 10V

RoHS :

Details

Product Type :

MOSFET

Rise Time :

22 ns

Transistor Polarity :

N-Channel

Drain-Source On-Volt :

100(V)

Channel Mode :

Enhancement

Rad Hardened :

No

Drain to Source Voltage (Vdss) :

100 V

Subcategory :

MOSFETs

Package :

Tube

Product Status :

Active

Polarity :

N

Pin Count :

3 +Tab

Power Dissipation :

306(W)

Operating Temperature Classification :

Military

Type :

Power MOSFET

Packaging :

Rail/Tube

Manufacturer :

Toshiba

Gate-Source Voltage (Max) :

±20(V)

Package / Case :

TO-220-3

Product Category :

MOSFET

Tradename :

U-MOSIX-H

Vgs (Max) :

±20V

Operating Temp Range :

-55C to 175C

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Style :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V