TK2A65D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

30W Tc

Max Operating Temperature :

150°C

Input Capacitance :

380pF

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Packaging :

Tube

FET Type :

N-Channel

Rds On Max :

3.26 Ω

Series :

π-MOSVII

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

3.26Ohm @ 1A, 10V

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Fall Time (Typ) :

7 ns

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Supplier Device Package :

TO-220SIS

Radiation Hardening :

No

Package / Case :

TO-220-3 Full Pack

Published :

2009

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

2A

Factory Lead Time :

16 Weeks

Number of Pins :

3

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

650V

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 25V