TK1R4F04PB,LXGQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

5500 pF @ 10 V

Transistor Type :

1 N-Channel

Product Status :

Active

Qualification :

AEC-Q101

Mounting Style :

SMD/SMT

Minimum Operating Temperature :

-

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

103 nC @ 10 V

Transistor Polarity :

N-Channel

Subcategory :

MOSFETs

Product Category :

MOSFET

Mounting Type :

Surface Mount

Number of Channels :

1 Channel

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

160A (Ta)

Rds On (Max) @ Id, Vgs :

1.9mOhm @ 80A, 6V

Power Dissipation (Max) :

205W (Tc)

Supplier Device Package :

TO-220SM(W)

Package :

Digi-Reel?

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Cut Tape

Vgs(th) (Max) @ Id :

3V @ 500μA

Manufacturer :

Toshiba

Rise Time :

14 ns

Maximum Operating Temperature :

+ 175 C

Vgs (Max) :

±20V

Operating Temperature :

175°C

Series :

U-MOSIX-H

Brand :

Toshiba

Base Product Number :

TK1R4F04

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

Configuration :

Single

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40 V