TK090Z65Z,S1F

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Mfr.Part #
TK090Z65Z,S1F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-247-4
Datasheet
Download
Description
MOSFET N-CH 650V 30A TO247-4L
Stock
39,221
In Stock :
39,221

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Supplied Contents :
Board(s)
Product Category :
MOSFET
Series :
FlexSense® I
Package / Case :
TO-247-4
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
47 nC @ 10 V
Rise Time :
30 ns
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650 V
Brand :
Toshiba
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
4V @ 1.27mA
Product Status :
Active
Package :
Box
Operating Temperature :
150°C
Configuration :
Single
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
90mOhm @ 15A, 10V
FET Type :
N-Channel
Supplier Device Package :
TO-247-4L(T)
Power Dissipation (Max) :
230W (Tc)
Channel Mode :
Enhancement
Sensing Range :
-
Tradename :
DTMOSVI
Subcategory :
MOSFETs
Product Type :
MOSFET
Manufacturer :
Toshiba
Interface :
I²C
Embedded :
Yes, MCU
Sensitivity :
-
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Voltage - Supply :
2.97V ~ 3.6V
Sensor Type :
Encoder, Optical
FET Feature :
-
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
2780 pF @ 300 V
Mounting Type :
Through Hole
Utilized IC / Part :
FS310
Drive Voltage (Max Rds On, Min Rds On) :
10V
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
30A (Ta)
Datasheets
TK090Z65Z,S1F
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK090Z65Z,S1F from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-4, Operating Temperature:150°C, Number of Channels:1 Channel, Mounting Type:Through Hole, TK090Z65Z,S1F pinout, TK090Z65Z,S1F datasheet PDF, TK090Z65Z,S1F amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK090Z65Z,S1F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



MOSFET (Metal Oxide) N-Channel Tube 90mOhm @ 15A, 10V ±30V 2780 pF @ 300 V 47 nC @ 10 V 650 V TO-247-4

TK090Z65Z,S1F Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2780 pF @ 300 V.This transistor requires a drain-source voltage (Vdss) of 650 V.

TK090Z65Z,S1F Features


a 650 V drain to source voltage (Vdss)


TK090Z65Z,S1F Applications


There are a lot of Toshiba
TK090Z65Z,S1F applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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