TK040N65Z,S1F
- Mfr.Part #
- TK040N65Z,S1F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 57A TO247
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6250pF @ 300V
- Gate Charge (Qg) (Max) @ Vgs :
- 105nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 2.85mA
- Package / Case :
- TO-247-3
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 360W Tc
- Factory Lead Time :
- 16 Weeks
- Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 57A Ta
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 28.5A, 10V
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Vgs (Max) :
- ±30V
- Drain to Source Voltage (Vdss) :
- 650V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- TK040N65Z,S1F

N-Channel 40m Ω @ 28.5A, 10V ±30V 6250pF @ 300V 105nC @ 10V 650V TO-247-3
TK040N65Z,S1F Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6250pF @ 300V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
TK040N65Z,S1F Features
a 650V drain to source voltage (Vdss)
TK040N65Z,S1F Applications
There are a lot of Toshiba Semiconductor and Storage
TK040N65Z,S1F applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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