TIP29CG
- Mfr.Part #
- TIP29CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 1A TO220
- Stock
- 3,974
- In Stock :
- 3,974
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Saturation Voltage :
- 700mV
- Mounting Type :
- Through Hole
- hFE Min :
- 40
- Weight :
- 4.535924g
- Factory Lead Time :
- 14 Weeks
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 100V
- Current - Collector Cutoff (Max) :
- 300μA
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Power Dissipation :
- 2W
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-220-3
- Transition Frequency :
- 3MHz
- Number of Elements :
- 1
- Length :
- 10.28mm
- Polarity/Channel Type :
- NPN
- Current Rating :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 125mA, 1A
- Width :
- 4.82mm
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Gain Bandwidth Product :
- 3MHz
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 15.75mm
- Operating Temperature :
- -65°C~150°C TJ
- Packaging :
- Tube
- Element Configuration :
- Single
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- TIP29
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 3MHz
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Datasheets
- TIP29CG

NPN -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP29CG Overview
In this device, the DC current gain is 15 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 125mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).3MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
TIP29CG Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz
TIP29CG Applications
There are a lot of ON Semiconductor
TIP29CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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