T2N7002AK,LM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Drain to Source Breakdown Voltage :

60V

Rds On Max :

3.9 Ω

Power Dissipation :

320mW

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

12 Weeks

Threshold Voltage :

1.1V

Series :

U-MOSVII-H

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 4.5V

Packaging :

Tape and Reel (TR)

Input Capacitance :

17pF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

7 ns

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

320mW Ta

Rds On (Max) @ Id, Vgs :

3.9Ohm @ 100mA, 10V

Vgs (Max) :

±20V

Supplier Device Package :

SOT-23

Number of Channels :

1

Published :

1998

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

17pF @ 10V

Continuous Drain Current (ID) :

200mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Height :

1.1mm

Mount :

Surface Mount

Drain to Source Resistance :

2.8Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Max Operating Temperature :

150°C

FET Type :

N-Channel

Turn On Delay Time :

2 ns