SVD2955T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 25V

Drain Current-Max (Abs) (ID) :

12A

Avalanche Energy Rating (Eas) :

216 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.18ohm

FET Type :

P-Channel

Vgs (Max) :

±20V

Power Dissipation-Max :

55W Tj

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Reference Standard :

AEC-Q101

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

60V

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

60V

Factory Lead Time :

22 Weeks

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pulsed Drain Current-Max (IDM) :

18A

Published :

2005