SUV85N10-10-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

240A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

130 ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Continuous Drain Current (ID) :

85A

Pin Count :

3

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 30A, 10V

Published :

2009

Drain to Source Breakdown Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Turn-Off Delay Time :

55 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

6550pF @ 25V

Mount :

Through Hole

JEDEC-95 Code :

TO-262AA

Series :

TrenchFET®

Number of Elements :

1

Rise Time :

90ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Resistance :

10.5mOhm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

3.75W Ta 250W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3