SUP36N20-54P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3.12W

Continuous Drain Current (ID) :

36A

JEDEC-95 Code :

TO-220AB

Published :

2009

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Threshold Voltage :

4.5V

Drive Voltage (Max Rds On,Min Rds On) :

10V 15V

Pulsed Drain Current-Max (IDM) :

80A

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

127nC @ 15V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Mounting Type :

Through Hole

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Number of Elements :

1

Series :

TrenchFET®

Turn-Off Delay Time :

27 ns

Number of Pins :

3

Radiation Hardening :

No

Rise Time :

170ns

Termination :

Through Hole

Drain to Source Breakdown Voltage :

200V

Power Dissipation-Max :

3.12W Ta 166W Tc

Mount :

Through Hole

Turn On Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

53m Ω @ 20A, 15V

Fall Time (Typ) :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 25V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Dual Supply Voltage :

200V

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Vgs (Max) :

±25V

Pin Count :

3

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Nominal Vgs :

4.5 V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

25V

Avalanche Energy Rating (Eas) :

20 mJ

Pbfree Code :

yes