SUP25P10-138-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Power Dissipation-Max :

3.1W Ta 73.5W Tc

Continuous Drain Current (ID) :

16.3A

Number of Pins :

3

Published :

2015

Current - Continuous Drain (Id) @ 25°C :

16.3A Tc

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

40A

Weight :

6.000006g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 50V

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 6A, 10V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Polarity/Channel Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Number of Channels :

1