SUP18N15-95-E3

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Mfr.Part #
SUP18N15-95-E3
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 150V 18A TO220-3
Stock
37,729
In Stock :
37,729

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~175°C TJ
Weight :
6.000006g
Length :
10.41mm
Max Operating Temperature :
175°C
Number of Channels :
1
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Turn-Off Delay Time :
17 ns
Height :
9.01mm
Turn On Delay Time :
8 ns
Series :
TrenchFET®
Mount :
Through Hole
Element Configuration :
Single
Vgs(th) (Max) @ Id :
2V @ 250μA (Min)
Rds On Max :
95 mΩ
Fall Time (Typ) :
30 ns
Published :
2005
Input Capacitance :
900pF
Package / Case :
TO-220-3
Rds On (Max) @ Id, Vgs :
95mOhm @ 15A, 10V
Drain to Source Resistance :
95mOhm
Supplier Device Package :
TO-220-3
Drain to Source Breakdown Voltage :
150V
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Packaging :
Tape and Reel (TR)
Power Dissipation :
88W
Number of Pins :
3
Power Dissipation-Max :
88W Tc
Rise Time :
35ns
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
18A
Min Operating Temperature :
-55°C
Width :
4.7mm
FET Type :
N-Channel
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
150V
Datasheets
SUP18N15-95-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SUP18N15-95-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, SUP18N15-95-E3 pinout, SUP18N15-95-E3 datasheet PDF, SUP18N15-95-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SUP18N15-95-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SUP18N15-95-E3


N-Channel Tape & Reel (TR) 95mOhm @ 15A, 10V ±20V 900pF @ 25V 25nC @ 10V 150V TO-220-3

SUP18N15-95-E3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 900pF @ 25V.This device conducts a continuous drain current (ID) of 18A, which is the maximum continuous current transistor can conduct.Using VGS=150V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 150V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 17 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 95mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 150V.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).

SUP18N15-95-E3 Features


a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 95mOhm
a 150V drain to source voltage (Vdss)


SUP18N15-95-E3 Applications


There are a lot of Vishay Siliconix
SUP18N15-95-E3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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