SUM33N20-60P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.144Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Published :

2009

Nominal Vgs :

4.5 V

Threshold Voltage :

4.5V

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

26 ns

Avalanche Energy Rating (Eas) :

20 mJ

Continuous Drain Current (ID) :

33A

Rds On (Max) @ Id, Vgs :

59m Ω @ 20A, 15V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

REACH SVHC :

No SVHC

Radiation Hardening :

No

Reverse Recovery Time :

114 ns

Pulsed Drain Current-Max (IDM) :

80A

HTS Code :

8541.29.00.95

Dual Supply Voltage :

200V

Fall Time (Typ) :

9 ns

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V 15V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

113nC @ 15V

Turn On Delay Time :

16 ns

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

200V

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2735pF @ 25V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Mount :

Surface Mount

Termination :

SMD/SMT

Rise Time :

170ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation-Max :

3.12W Ta 156W Tc

ECCN Code :

EAR99

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Transistor Element Material :

SILICON