SUG80050E-GE3

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Mfr.Part #
SUG80050E-GE3
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 100A TO247AC
Stock
13,737
In Stock :
13,737

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
5.4m Ω @ 20A, 10V
Turn-Off Delay Time :
72 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Series :
ThunderFET®
Input Capacitance (Ciss) (Max) @ Vds :
6250pF @ 75V
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
500W Tc
Drive Voltage (Max Rds On,Min Rds On) :
7.5V 10V
Reach Compliance Code :
Unknown
Factory Lead Time :
14 Weeks
Height :
25.11mm
Drain to Source Breakdown Voltage :
150V
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Power Dissipation :
500W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Packaging :
Tube
Mounting Type :
Through Hole
Max Junction Temperature (Tj) :
175°C
Package / Case :
TO-247-3
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
100A Tc
ECCN Code :
EAR99
Number of Channels :
1
Continuous Drain Current (ID) :
100A
Turn On Delay Time :
18 ns
Datasheets
SUG80050E-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SUG80050E-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Channels:1, SUG80050E-GE3 pinout, SUG80050E-GE3 datasheet PDF, SUG80050E-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SUG80050E-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SUG80050E-GE3


N-Channel Tube 5.4m Ω @ 20A, 10V ±20V 6250pF @ 75V 165nC @ 10V TO-247-3

SUG80050E-GE3 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6250pF @ 75V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Using VGS=150V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 150V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 72 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 7.5V 10V volts (7.5V 10V).

SUG80050E-GE3 Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 72 ns


SUG80050E-GE3 Applications


There are a lot of Vishay Siliconix
SUG80050E-GE3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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