SUD70090E-GE3
- Mfr.Part #
- SUD70090E-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 50A TO252
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 8.9m Ω @ 20A, 10V
- Series :
- ThunderFET®
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Case Connection :
- DRAIN
- Drain-source On Resistance-Max :
- 0.0089Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 50V
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 7.5V 10V
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 14 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 120A
- Continuous Drain Current (ID) :
- 50A
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 125W Tc
- Published :
- 2017
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- SUD70090E-GE3
N-Channel Bulk 8.9m Ω @ 20A, 10V ±20V 1950pF @ 50V 50nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
SUD70090E-GE3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1950pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.Peak drain current for this device is 120A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (7.5V 10V) reduces this device's overall power consumption.
SUD70090E-GE3 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 120A.
a 100V drain to source voltage (Vdss)
SUD70090E-GE3 Applications
There are a lot of Vishay Siliconix
SUD70090E-GE3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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