SUD70090E-GE3

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Mfr.Part #
SUD70090E-GE3
Manufacturer
Vishay
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 100V 50A TO252
Stock
1
In Stock :
1

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Number of Terminations :
2
Vgs (Max) :
±20V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
8.9m Ω @ 20A, 10V
Series :
ThunderFET®
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Case Connection :
DRAIN
Drain-source On Resistance-Max :
0.0089Ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-30 Code :
R-PSSO-G2
Number of Elements :
1
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 50V
Transistor Application :
SWITCHING
Packaging :
Bulk
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature :
-55°C~175°C TJ
DS Breakdown Voltage-Min :
100V
Drive Voltage (Max Rds On,Min Rds On) :
7.5V 10V
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
80 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
14 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
120A
Continuous Drain Current (ID) :
50A
Drain to Source Voltage (Vdss) :
100V
Mounting Type :
Surface Mount
Power Dissipation-Max :
125W Tc
Published :
2017
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS Status :
ROHS3 Compliant
Datasheets
SUD70090E-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SUD70090E-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, SUD70090E-GE3 pinout, SUD70090E-GE3 datasheet PDF, SUD70090E-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SUD70090E-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SUD70090E-GE3


N-Channel Bulk 8.9m Ω @ 20A, 10V ±20V 1950pF @ 50V 50nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63

SUD70090E-GE3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1950pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.Peak drain current for this device is 120A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (7.5V 10V) reduces this device's overall power consumption.

SUD70090E-GE3 Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 120A.
a 100V drain to source voltage (Vdss)


SUD70090E-GE3 Applications


There are a lot of Vishay Siliconix
SUD70090E-GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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