SUD35N10-26P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

8.3W Ta 83W Tc

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

14 Weeks

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

35A

ECCN Code :

EAR99

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

26m Ω @ 12A, 10V

Element Configuration :

Single

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.026ohm

Weight :

1.437803g

Height :

2.38mm

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Case Connection :

DRAIN

Width :

6.22mm

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Power Dissipation :

8.3W

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Series :

TrenchFET®

Continuous Drain Current (ID) :

12A

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

15 ns

Avalanche Energy Rating (Eas) :

55 mJ

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Pulsed Drain Current-Max (IDM) :

40A

Vgs(th) (Max) @ Id :

4.4V @ 250μA

Vgs (Max) :

±20V

Number of Terminations :

2

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 12V

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Turn On Delay Time :

10 ns

Number of Channels :

1

Transistor Element Material :

SILICON