SUD19N20-90-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Case Connection :

DRAIN

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

90m Ω @ 5A, 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3W Ta 136W Tc

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Threshold Voltage :

4V

Voltage :

200V

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

30 ns

Published :

2013

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Rise Time :

50ns

REACH SVHC :

No SVHC

Number of Terminations :

2

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Resistance :

90mOhm

Length :

6.73mm

Dual Supply Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Width :

6.22mm

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Pbfree Code :

yes

Weight :

1.437803g

Lead Free :

Lead Free

Number of Elements :

1

Fall Time (Typ) :

60 ns

Contact Plating :

Tin

Series :

TrenchFET®

Current :

19A

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

19A

Mount :

Surface Mount

Power Dissipation :

3W

Drain to Source Breakdown Voltage :

200V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

2.39mm