SUB75P03-07-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

175°C

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

7mOhm @ 30A, 10V

FET Type :

P-Channel

Resistance :

7mOhm

Fall Time (Typ) :

210 ns

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-30V

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

3.75W Ta 187W Tc

Input Capacitance :

9nF

Power Dissipation :

187W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Number of Elements :

1

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Element Configuration :

Single

Rds On Max :

7 mΩ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.41mm

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Width :

9.65mm

Rise Time :

225ns

Drain to Source Breakdown Voltage :

-30V

Drain to Source Resistance :

7mOhm

Turn-Off Delay Time :

150 ns

Weight :

2.240009g

Turn On Delay Time :

25 ns

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Continuous Drain Current (ID) :

75A

Mount :

Surface Mount

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-263 (D2Pak)