STY80NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±25V

Continuous Drain Current (ID) :

37A

Turn On Delay Time :

50 ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3V

Packaging :

Tube

Pin Count :

3

Drain Current-Max (Abs) (ID) :

74A

Peak Reflow Temperature (Cel) :

225

Turn-Off Delay Time :

440 ns

Moisture Sensitivity Level (MSL) :

Not Applicable

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

35m Ω @ 37A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Resistance :

35mOhm

Rise Time :

65ns

Input Capacitance (Ciss) (Max) @ Vds :

10100pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MDmesh™ II

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Height :

20.3mm

ECCN Code :

EAR99

Fall Time (Typ) :

200 ns

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Terminal Finish :

MATTE TIN

Number of Elements :

1

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Power Dissipation-Max :

447W Tc

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Base Part Number :

STY80N

Transistor Element Material :

SILICON

Length :

15.9mm

Radiation Hardening :

No

Package / Case :

TO-247-3

Operating Temperature :

150°C TJ

Number of Pins :

3

Mount :

Through Hole

Width :

5.3mm

Power Dissipation :

447W

RoHS Status :

ROHS3 Compliant