STWA45N65M5
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- Mfr.Part #
- STWA45N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 35A TO247
- Stock
- 339
- In Stock ：
- 339
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.078Ohm
- Continuous Drain Current (ID) :
- 35A
- Gate to Source Voltage (Vgs) :
- 25V
- Mount :
- Through Hole
- Power Dissipation-Max :
- 210W Tc
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Avalanche Energy Rating (Eas) :
- 810 mJ
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 9.3 ns
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- Rise Time :
- 11ns
- Packaging :
- Tube
- Number of Pins :
- 3
- Power Dissipation :
- 210W
- Turn-Off Delay Time :
- 16 ns
- Rds On (Max) @ Id, Vgs :
- 78m Ω @ 17.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 17 Weeks
- Turn On Delay Time :
- 79.5 ns
- Transistor Application :
- SWITCHING
- Base Part Number :
- STWA45
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 140A
- Vgs (Max) :
- ±25V
- Series :
- MDmesh™ V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 3470pF @ 100V
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 650V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Datasheets
- STWA45N65M5
STWA45N65M5 Documents
N-Channel Tube 78m Ω @ 17.5A, 10V ±25V 3470pF @ 100V 82nC @ 10V TO-247-3
STWA45N65M5 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3470pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 35A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 16 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 140A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 79.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STWA45N65M5 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 140A.
STWA45N65M5 Applications
There are a lot of STMicroelectronics
STWA45N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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