STW9N150

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Turn On Delay Time :

41 ns

REACH SVHC :

No SVHC

Packaging :

Tube

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

89.3nC @ 10V

Width :

5.15mm

Factory Lead Time :

12 Weeks

Base Part Number :

STW9N

Input Capacitance (Ciss) (Max) @ Vds :

3255pF @ 25V

ECCN Code :

EAR99

Element Configuration :

Single

Height :

24.45mm

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 4A, 10V

Max Junction Temperature (Tj) :

150°C

Number of Pins :

3

Number of Channels :

1

FET Type :

N-Channel

Series :

PowerMESH™

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

1500V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

320W Tc

Continuous Drain Current (ID) :

8A

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Drain Current-Max (Abs) (ID) :

8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

320W

Turn-Off Delay Time :

86 ns

Fall Time (Typ) :

52 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Lead Free :

Lead Free

Mount :

Through Hole

Resistance :

2.5Ohm

Length :

15.75mm

Vgs (Max) :

±30V

Rise Time :

14.7ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

720 mJ

Drain to Source Breakdown Voltage :

1.5kV