STV200N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Power Dissipation-Max :

300W Tc

Fall Time (Typ) :

50 ns

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

250

Package / Case :

PowerSO-10 Exposed Bottom Pad

Continuous Drain Current (ID) :

200A

RoHS Status :

ROHS3 Compliant

Rise Time :

150ns

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

800A

Resistance :

2.5MOhm

Vgs (Max) :

±20V

Power Dissipation :

300W

Turn-Off Delay Time :

110 ns

Number of Pins :

10

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Elements :

1

Qualification Status :

Not Qualified

Pin Count :

10

FET Type :

N-Channel

Number of Terminations :

10

Drain to Source Breakdown Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Continuous Drain (Id) @ 25°C :

200A Tc

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 75A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Base Part Number :

STV200

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

STripFET™