STT7P2UH7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STT7P

Fall Time (Typ) :

84.5 ns

FET Type :

P-Channel

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

12.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Number of Channels :

1

Drain to Source Breakdown Voltage :

20V

Package / Case :

SOT-23-6

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

22.5m Ω @ 3.5A, 4.5V

Continuous Drain Current (ID) :

7A

Element Configuration :

Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 16V

Turn-Off Delay Time :

128 ns

Drain Current-Max (Abs) (ID) :

7A

Operating Temperature :

150°C TJ

Series :

STripFET™

Mount :

Surface Mount

Power Dissipation-Max :

1.6W Tc

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Rise Time :

30.5ns

Vgs (Max) :

±8V

Number of Terminations :

6

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

28A

Gate to Source Voltage (Vgs) :

8V

Resistance :

19.5MOhm

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G6

Weight :

36.003894mg