STT3P2UH7
- Mfr.Part #
- STT3P2UH7
- Manufacturer
- STMicroelectronics
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A SOT23-6
- Stock
- 2,588
- In Stock :
- 2,588
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Fall Time (Typ) :
- 19 ns
- Drain Current-Max (Abs) (ID) :
- 3A
- Resistance :
- 87mOhm
- Package / Case :
- SOT-23-6
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Turn-Off Delay Time :
- 40 ns
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Vgs (Max) :
- ±8V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 36.003894mg
- Number of Elements :
- 1
- Rise Time :
- 21ns
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 20V
- Mount :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Element Configuration :
- Single
- Power Dissipation-Max :
- 1.6W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 4.8nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- Series :
- STripFET™
- Terminal Position :
- Dual
- FET Type :
- P-Channel
- Base Part Number :
- STT3P
- Turn On Delay Time :
- 9 ns
- JESD-30 Code :
- R-PDSO-G6
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 1.5A, 4.5V
- Continuous Drain Current (ID) :
- 3A
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Drain to Source Breakdown Voltage :
- 30V
- Datasheets
- STT3P2UH7

P-Channel Cut Tape (CT) 100m Ω @ 1.5A, 4.5V ±8V 510pF @ 10V 4.8nC @ 4.5V 20V SOT-23-6
STT3P2UH7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 510pF @ 10V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
STT3P2UH7 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 40 ns
a 20V drain to source voltage (Vdss)
STT3P2UH7 Applications
There are a lot of STMicroelectronics
STT3P2UH7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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