STS26N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

46 ns

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Series :

DeepGATE™, STripFET™ VI

Packaging :

Cut Tape (CT)

Power Dissipation :

2.7W

Number of Pins :

8

Terminal Position :

Dual

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Pin Count :

8

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 13A, 10V

FET Type :

N-Channel

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

26A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Terminal Form :

Gull wing

Nominal Vgs :

1 V

Base Part Number :

STS26

Drain to Source Breakdown Voltage :

30V

Avalanche Energy Rating (Eas) :

525 mJ

Vgs (Max) :

±20V

Number of Elements :

1

Power Dissipation-Max :

2.7W Ta

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1V

Turn-Off Delay Time :

75 ns

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

4040pF @ 25V

Factory Lead Time :

20 Weeks

Rise Time :

18ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Resistance :

4.4mOhm

Additional Feature :

ULTRA-LOW RESISTANCE

Turn On Delay Time :

17 ns

Operating Temperature :

-55°C~150°C TJ