STR1P2UH7
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- Mfr.Part #
- STR1P2UH7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.4A SOT-23
- Stock
- 5,150
- In Stock ：
- 5,150
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 10V
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 700mA, 4.5V
- Continuous Drain Current (ID) :
- 1.4A
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±8V
- Gate Charge (Qg) (Max) @ Vgs :
- 4.8nC @ 4.5V
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Base Part Number :
- STR1
- Packaging :
- Cut Tape (CT)
- Drain to Source Voltage (Vdss) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Series :
- STripFET™ H7
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Ta
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 350mW Tc
- Operating Temperature :
- 150°C TJ
- Datasheets
- STR1P2UH7
P-Channel Cut Tape (CT) 100m Ω @ 700mA, 4.5V ±8V 510pF @ 10V 4.8nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
STR1P2UH7 Description
STR1P2UH7 is a type of P-channel power MOSFET developed by STMicroelectronics using STripFET H7 technology and a trench gate structure. It is able to provide extremely low on-state resistance, low capacitance, and gate charge, as well as high avalanche ruggedness. Moreover, STR1P2UH7 also offers ultra-low capacitances for higher switching frequency operations.
STR1P2UH7 Features
-
STripFET H7 technology
-
Extremely low on-state resistance
-
Low capacitance and gate charge
-
High avalanche ruggedness
-
Available in the SOT-23 package
STR1P2UH7 Applications
-
Switching applications
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