STQ3N45K3-AP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

600mA Tc

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Pulsed Drain Current-Max (IDM) :

2.4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Power Dissipation-Max :

3W Tc

Drain to Source Breakdown Voltage :

450V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Packaging :

Tape and Box (TB)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

0.6A

Transistor Application :

SWITCHING

FET Type :

N-Channel

Length :

4.95mm

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

JESD-609 Code :

e3

Series :

SuperMESH3™

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Width :

3.94mm

Continuous Drain Current (ID) :

600mA

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Base Part Number :

STQ3

Height :

4.95mm

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

3.75V

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Mounting Type :

Through Hole

Power Dissipation :

2.5W

Vgs (Max) :

±30V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Rds On (Max) @ Id, Vgs :

3.8 Ω @ 500mA, 10V

Number of Elements :

1

Number of Pins :

3