STO36N60M6
- Mfr.Part #
- STO36N60M6
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerSFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TOLL
- Stock
- 1,630
- In Stock :
- 1,630
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.75V @ 250μA
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 230W Tc
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 44.3nC @ 10V
- Vgs (Max) :
- ±25V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 12 Weeks
- Series :
- MDmesh™ M6
- Package / Case :
- 8-PowerSFN
- Base Part Number :
- STO36
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1960pF @ 100V
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 15A, 10V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- STO36N60M6

N-Channel Tape & Reel (TR) 99m Ω @ 15A, 10V ±25V 1960pF @ 100V 44.3nC @ 10V 600V 8-PowerSFN
The new MDMesh M6 technology combines the latest developments in the well-known and consolidated SJ MOSFET MDMesh series. STMicroelectronics builds on the previous generation of MDMesh devices through its new M6 technology, which combines excellent RDS improvements per area with one of the most efficient switching behaviors available and provides a user-friendly experience for maximum end application efficiency.
STO36N60M6 Features
? Reduced switching losses
? Lower RDS(on) per area vs previous generation
? Low gate input resistance
? 100% avalanche tested
? Zener-protected
? Excellent switching performance thanks to the extra driving source pin
STO36N60M6 Applications
? Switching applications
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