STLD125N4F6AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Series :

STripFET™ F6

Avalanche Energy Rating (Eas) :

150 mJ

Drain to Source Voltage (Vdss) :

40V

Drain Current-Max (Abs) (ID) :

101A

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Elements :

1

Terminal Form :

Flat

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerWDFN

Power Dissipation-Max :

130W Tc

DS Breakdown Voltage-Min :

40V

Base Part Number :

STLD125

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

Factory Lead Time :

20 Weeks

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

480A

Drive Voltage (Max Rds On,Min Rds On) :

6.5V 10V

Surface Mount :

yes

Drain-source On Resistance-Max :

0.004ohm

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc