STL58N3LLH5
- Mfr.Part #
- STL58N3LLH5
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 64A POWERFLAT
- Stock
- 2,729
- In Stock :
- 2,729
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- 8-PowerVDFN
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 7.5A, 10V
- DS Breakdown Voltage-Min :
- 30V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Terminal Form :
- Flat
- Packaging :
- Cut Tape (CT)
- Drain-source On Resistance-Max :
- 0.0112Ohm
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 64A
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 64A Tc
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 4.8W Ta 62.5W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- JESD-30 Code :
- R-PDSO-F5
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Number of Terminations :
- 5
- Pulsed Drain Current-Max (IDM) :
- 224A
- Base Part Number :
- STL58
- Vgs (Max) :
- +22V, -20V
- Series :
- Automotive, AEC-Q101, STripFET™ H5
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 25V
- Mounting Type :
- Surface Mount
- Datasheets
- STL58N3LLH5

N-Channel Cut Tape (CT) 9m Ω @ 7.5A, 10V +22V, -20V 950pF @ 25V 10nC @ 4.5V 30V 8-PowerVDFN
STL58N3LLH5 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 150 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 950pF @ 25V.This device conducts a continuous drain current (ID) of 64A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 224A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
STL58N3LLH5 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 64A
based on its rated peak drain current 224A.
a 30V drain to source voltage (Vdss)
STL58N3LLH5 Applications
There are a lot of STMicroelectronics
STL58N3LLH5 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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