STK820
- Mfr.Part #
- STK820
- Manufacturer
- STMicroelectronics
- Package / Case
- PolarPak®
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 21A POLARPAK
- Stock
- 8,263
- In Stock :
- 8,263
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Series :
- STripFET™
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1425pF @ 25V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Power Dissipation :
- 5.2W
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-XDSO-N4
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 17 ns
- Terminal Form :
- NO LEAD
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Power Dissipation-Max :
- 5.2W Ta
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±16V
- Rise Time :
- 23ns
- Pin Count :
- 10
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 10.5A, 10V
- Drain to Source Breakdown Voltage :
- 25V
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Drain-source On Resistance-Max :
- 0.008Ohm
- Case Connection :
- SOURCE
- Number of Pins :
- 10
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 21A
- Pulsed Drain Current-Max (IDM) :
- 84A
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 16V
- Package / Case :
- PolarPak®
- Fall Time (Typ) :
- 4 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9.5nC @ 4.5V
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Base Part Number :
- STK8
- Mount :
- Surface Mount
- Terminal Finish :
- MATTE TIN
- Datasheets
- STK820

N-Channel Tape & Reel (TR) 7.3m Ω @ 10.5A, 10V ±16V 1425pF @ 25V 9.5nC @ 4.5V PolarPak®
STK820 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 600 mJ.A device's maximum input capacitance is 1425pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=25V, and this device has a drain-to-source breakdown voltage of 25V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 17 ns.Its maximum pulsed drain current is 84A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
STK820 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 17 ns
based on its rated peak drain current 84A.
STK820 Applications
There are a lot of STMicroelectronics
STK820 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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