STI90N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

ECCN Code :

EAR99

Rise Time :

60ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

110W Tc

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

80A

Drain-source On Resistance-Max :

0.0062Ohm

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

15 ns

Operating Temperature :

-55°C~175°C TJ

Base Part Number :

STI9

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Power Dissipation :

110W

Pin Count :

3

Series :

STripFET™ III

Case Connection :

DRAIN

Turn-Off Delay Time :

40 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Avalanche Energy Rating (Eas) :

400 mJ

Mounting Type :

Through Hole

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

40V

Mount :

Through Hole

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Packaging :

Tube

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Number of Pins :

3