STI8N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Avalanche Energy Rating (Eas) :

120 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Gate to Source Voltage (Vgs) :

25V

Rise Time :

14ns

Mount :

Through Hole

Drain-source On Resistance-Max :

0.6Ohm

Transistor Element Material :

SILICON

Number of Pins :

3

Vgs (Max) :

±25V

Base Part Number :

STI8

Threshold Voltage :

4V

Continuous Drain Current (ID) :

7A

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Series :

MDmesh™ V

Additional Feature :

ULTRA-LOW RESISTANCE

Pin Count :

3

Pbfree Code :

yes

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

7A

Mounting Type :

Through Hole

Turn-Off Delay Time :

50 ns

Number of Elements :

1

Fall Time (Typ) :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Drain to Source Breakdown Voltage :

650V

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

10.75mm

Turn On Delay Time :

50 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Power Dissipation-Max :

70W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

ECCN Code :

EAR99

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

28A

Radiation Hardening :

No

Length :

10.4mm

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Power Dissipation :

70W

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

RoHS Status :

ROHS3 Compliant

Width :

4.6mm