STI57N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Pulsed Drain Current-Max (IDM) :

168A

Packaging :

Tube

Transistor Application :

SWITCHING

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Turn On Delay Time :

73 ns

Turn-Off Delay Time :

19 ns

Fall Time (Typ) :

12 ns

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

ECCN Code :

EAR99

Base Part Number :

STI57N

Height :

9.35mm

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MDmesh™ V

Rise Time :

15ns

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Power Dissipation :

250W

Avalanche Energy Rating (Eas) :

960 mJ

Mounting Type :

Through Hole

Radiation Hardening :

No

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.6mm

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Length :

10.4mm

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

FET Type :

N-Channel

Element Configuration :

Single

Factory Lead Time :

17 Weeks

Continuous Drain Current (ID) :

42A

Drain to Source Breakdown Voltage :

650V

Vgs (Max) :

±25V

Power Dissipation-Max :

250W Tc

Rds On (Max) @ Id, Vgs :

63m Ω @ 21A, 10V