STH80N10F7-2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Case Connection :

DRAIN

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Elements :

2

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

ULTRA LOW-ON RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

110W Tc

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Channels :

1

Drain-source On Resistance-Max :

0.0095Ohm

Operating Mode :

ENHANCEMENT MODE

Height :

4.8mm

Width :

9.17mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

13 ns

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 40A, 10V

Weight :

3.949996g

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Number of Pins :

3

Element Configuration :

Single

Continuous Drain Current (ID) :

80A

Base Part Number :

STH80N

Rise Time :

32ns

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 50V

Turn-Off Delay Time :

36 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Power Dissipation :

110W

Series :

DeepGATE™, STripFET™ VII

Length :

10.4mm

Turn On Delay Time :

19 ns

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Number of Terminations :

2

Factory Lead Time :

37 Weeks

Drain to Source Breakdown Voltage :

100V