STH6N95K5-2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

6A

Vgs (Max) :

±30V

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

90 mJ

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

24A

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Packaging :

Cut Tape (CT)

DS Breakdown Voltage-Min :

950V

Series :

MDmesh™ K5

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 100V

Mount :

Surface Mount

Base Part Number :

STH6N

Mounting Type :

Surface Mount

Power Dissipation-Max :

110W Tc

Rds On (Max) @ Id, Vgs :

1.25 Ω @ 3A, 10V

Drain to Source Voltage (Vdss) :

950V

Vgs(th) (Max) @ Id :

5V @ 100µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Terminations :

2

Terminal Position :

Single

Continuous Drain Current (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Terminal Form :

Gull wing