STH400N4F6-2
- Mfr.Part #
- STH400N4F6-2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 180A H2PAK-2
- Stock
- 4,328
- In Stock :
- 4,328
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 404nC @ 10V
- Fall Time (Typ) :
- 168 ns
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Weight :
- 3.949996g
- Current - Continuous Drain (Id) @ 25°C :
- 180A Tc
- Continuous Drain Current (ID) :
- 180A
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 1.15m Ω @ 60A, 10V
- Turn On Delay Time :
- 71 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 184ns
- Width :
- 15.8mm
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 20500pF @ 25V
- Drain to Source Breakdown Voltage :
- 40V
- Length :
- 10.4mm
- Base Part Number :
- STH400
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 168 ns
- Radiation Hardening :
- No
- Height :
- 4.8mm
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 300W Tc
- Datasheets
- STH400N4F6-2

N-Channel Tape & Reel (TR) 1.15m Ω @ 60A, 10V ±20V 20500pF @ 25V 404nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH400N4F6-2 Overview
A device's maximum input capacitance is 20500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 168 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 71 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STH400N4F6-2 Features
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 168 ns
STH400N4F6-2 Applications
There are a lot of STMicroelectronics
STH400N4F6-2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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