STF9NK80Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Transistor Element Material :

SILICON

Rise Time :

19ns

Lead Free :

Lead Free

Case Connection :

Isolated

Power Dissipation :

150W

Mount :

Through Hole

Drain to Source Breakdown Voltage :

800V

Turn On Delay Time :

26 ns

Voltage - Rated DC :

800V

Terminal Finish :

Tin

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Fall Time (Typ) :

18 ns

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

JESD-609 Code :

e3

Current Rating :

7.5A

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Radiation Hardening :

No

Base Part Number :

STF9

Continuous Drain Current (ID) :

7.5A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Series :

SuperMESH™

Number of Pins :

3

Power Dissipation-Max :

35W Tc

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Turn-Off Delay Time :

58 ns