STF8NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Element Configuration :

Single

Length :

10.4mm

Radiation Hardening :

No

Turn On Delay Time :

7 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

JESD-609 Code :

e3

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

8.8 ns

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

790m Ω @ 2.5A, 10V

Width :

4.6mm

Threshold Voltage :

3V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

25 ns

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate to Source Voltage (Vgs) :

25V

Power Dissipation :

20W

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Terminal Finish :

Matte Tin (Sn) - annealed

Pulsed Drain Current-Max (IDM) :

20A

Number of Terminations :

3

Series :

MDmesh™ II

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

20W Tc

Vgs (Max) :

±25V

Drain to Source Breakdown Voltage :

500V

Base Part Number :

STF8N

Rise Time :

4.4ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Height :

16.4mm

Pin Count :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

790mOhm

REACH SVHC :

No SVHC

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

5A

ECCN Code :

EAR99

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

5A

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

364pF @ 50V