STF2N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Resistance :

3.6Ohm

Mounting Type :

Through Hole

Rise Time :

4.4ns

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Fall Time (Typ) :

22 ns

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.1A, 10V

Avalanche Energy Rating (Eas) :

85 mJ

Continuous Drain Current (ID) :

2.2A

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

20W

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

8 ns

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

21 ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Element Configuration :

Single

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Threshold Voltage :

3.75V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

ULTRA-LOW RESISTANCE

Length :

10.4mm

Pulsed Drain Current-Max (IDM) :

8.8A

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 50V

ECCN Code :

EAR99

Power Dissipation-Max :

20W Tc

Base Part Number :

STF2N

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Height :

16.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

2.2A Tc

Pin Count :

3

Drain to Source Breakdown Voltage :

620V

Mount :

Through Hole

Width :

4.6mm

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

FET Type :

N-Channel

Series :

SuperMESH3™

Transistor Element Material :

SILICON