STF28N65M2
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- Mfr.Part #
- STF28N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 20A TO220FP
- Stock
- 15,980
- In Stock ：
- 15,980
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 80A
- Package / Case :
- TO-220-3 Full Pack
- Turn-Off Delay Time :
- 59 ns
- Number of Elements :
- 1
- Base Part Number :
- STF28
- Input Capacitance (Ciss) (Max) @ Vds :
- 1440pF @ 100V
- FET Type :
- N-Channel
- Factory Lead Time :
- 16 Weeks
- Power Dissipation-Max :
- 30W Tc
- Length :
- 10.4mm
- Drain-source On Resistance-Max :
- 0.18ohm
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 25V
- Avalanche Energy Rating (Eas) :
- 760 mJ
- ECCN Code :
- EAR99
- Series :
- MDmesh™ M2
- Vgs (Max) :
- ±25V
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 13.4 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Height :
- 16.4mm
- Continuous Drain Current (ID) :
- 20A
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 10A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Mounting Type :
- Through Hole
- Width :
- 4.6mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 650V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 650V
- Packaging :
- Tube
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- Datasheets
- STF28N65M2
N-Channel Tube 180m Ω @ 10A, 10V ±25V 1440pF @ 100V 35nC @ 10V 650V TO-220-3 Full Pack
STF28N65M2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 760 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1440pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.It is [59 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 80A.A turn-on delay time of 13.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.The DS breakdown voltage should be maintained above 650V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
STF28N65M2 Features
the avalanche energy rating (Eas) is 760 mJ
a continuous drain current (ID) of 20A
the turn-off delay time is 59 ns
based on its rated peak drain current 80A.
a 650V drain to source voltage (Vdss)
STF28N65M2 Applications
There are a lot of STMicroelectronics
STF28N65M2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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