STF28N60M2
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- Mfr.Part #
- STF28N60M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 24A TO220FP
- Stock
- 7,018
- In Stock ：
- 7,018
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Length :
- 10.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 24A
- Power Dissipation-Max :
- 30W Tc
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 25V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 600V
- Package / Case :
- TO-220-3 Full Pack
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 12A, 10V
- Power Dissipation :
- 30W
- Weight :
- 329.988449mg
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Turn-Off Delay Time :
- 100 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 4.6mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Channels :
- 1
- Vgs (Max) :
- ±25V
- Base Part Number :
- STF28
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 16.4mm
- Turn On Delay Time :
- 14.5 ns
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370pF @ 100V
- Series :
- MDmesh™ II Plus
- Datasheets
- STF28N60M2
N-Channel Tube 150m Ω @ 12A, 10V ±25V 1370pF @ 100V 37nC @ 10V TO-220-3 Full Pack
STF28N60M2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1370pF @ 100V.This device conducts a continuous drain current (ID) of 24A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 100 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STF28N60M2 Features
a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
STF28N60M2 Applications
There are a lot of STMicroelectronics
STF28N60M2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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