STF26NM60N-H

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Continuous Drain Current (ID) :

20A

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - annealed

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation-Max :

30W Tc

RoHS Status :

ROHS3 Compliant

Rise Time :

25ns

Radiation Hardening :

No

Number of Pins :

3

Operating Temperature :

150°C TJ

Avalanche Energy Rating (Eas) :

610 mJ

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Packaging :

Tube

Case Connection :

Isolated

Base Part Number :

STF26

Turn On Delay Time :

13 ns

Pbfree Code :

yes

Turn-Off Delay Time :

85 ns

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

MDmesh™ II

Fall Time (Typ) :

50 ns

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

80A

Drain-source On Resistance-Max :

0.165Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Rds On (Max) @ Id, Vgs :

165m Ω @ 10A, 10V

Mount :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation :

30W

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V