STF26NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Rise Time :

25ns

Drain to Source Voltage (Vdss) :

600V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

JEDEC-95 Code :

TO-220AB

Operating Temperature :

150°C TJ

Nominal Vgs :

3 V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

25V

Power Dissipation :

30W

Width :

4.6mm

REACH SVHC :

No SVHC

Power Dissipation-Max :

35W Tc

Turn-Off Delay Time :

85 ns

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Radiation Hardening :

No

Number of Terminations :

3

Base Part Number :

STF26

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

10A

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Height :

16.4mm

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 50V

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - annealed

Element Configuration :

Single

Package / Case :

TO-220-3 Full Pack

Series :

MDmesh™ II

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

80A

Case Connection :

Isolated

Number of Pins :

3

DS Breakdown Voltage-Min :

600V

Turn On Delay Time :

13 ns

Drain Current-Max (Abs) (ID) :

20A

Mounting Type :

Through Hole

Fall Time (Typ) :

50 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

165m Ω @ 10A, 10V

Length :

10.4mm